2DB1188R-13 Overview
This device has a DC current gain of 180 @ 500mA 3V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.There is a transition frequency of 120MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2DB1188R-13 Features
the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2DB1188R-13 Applications
There are a lot of Diodes Incorporated 2DB1188R-13 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
