MJD200T4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 45 @ 2A 1V.A collector emitter saturation voltage of 1.8V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 65MHz.Input voltage breakdown is available at 25V volts.During maximum operation, collector current can be as low as 5A volts.
MJD200T4G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200T4G Applications
There are a lot of ON Semiconductor MJD200T4G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
