MPSA43 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MPSA43 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Weight
201mg
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
200V
Max Power Dissipation
625mW
Current Rating
200mA
Frequency
50MHz
Base Part Number
MPSA43
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
625mW
Power - Max
625mW
Gain Bandwidth Product
50MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
200V
Voltage - Collector Emitter Breakdown (Max)
200V
Current - Collector (Ic) (Max)
500mA
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
200V
Frequency - Transition
50MHz
Collector Base Voltage (VCBO)
200V
Emitter Base Voltage (VEBO)
6V
hFE Min
50
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.07000
$0.07
500
$0.0693
$34.65
1000
$0.0686
$68.6
1500
$0.0679
$101.85
2000
$0.0672
$134.4
2500
$0.0665
$166.25
MPSA43 Product Details
MPSA43 Overview
This device has a DC current gain of 25 @ 1mA 10V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.Single BJT transistor can take a breakdown input voltage of 200V volts.TO-92-3 is the supplier device package for this product.Detection of Collector Emitter Breakdown at 200V maximal voltage is present.A maximum collector current of 500mA volts can be achieved.
MPSA43 Features
the DC current gain for this device is 25 @ 1mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at 6V the current rating of this device is 200mA the supplier device package of TO-92-3
MPSA43 Applications
There are a lot of ON Semiconductor MPSA43 applications of single BJT transistors.