2SC5866TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC5866TLQ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-96
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2A
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC5866
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
120
Continuous Collector Current
2A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.636120
$0.63612
10
$0.600113
$6.00113
100
$0.566145
$56.6145
500
$0.534099
$267.0495
1000
$0.503867
$503.867
2SC5866TLQ Product Details
2SC5866TLQ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.Continuous collector voltages of 2A should be maintained to achieve high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Parts of this part have transition frequencies of 200MHz.Input voltage breakdown is available at 60V volts.Maximum collector currents can be below 2A volts.
2SC5866TLQ Features
the DC current gain for this device is 120 @ 100mA 2V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 6V the current rating of this device is 2A a transition frequency of 200MHz
2SC5866TLQ Applications
There are a lot of ROHM Semiconductor 2SC5866TLQ applications of single BJT transistors.