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2SC5866TLQ

2SC5866TLQ

2SC5866TLQ

ROHM Semiconductor

2SC5866TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC5866TLQ Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC5866
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
Continuous Collector Current 2A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.636120 $0.63612
10 $0.600113 $6.00113
100 $0.566145 $56.6145
500 $0.534099 $267.0495
1000 $0.503867 $503.867
2SC5866TLQ Product Details

2SC5866TLQ Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.Continuous collector voltages of 2A should be maintained to achieve high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Parts of this part have transition frequencies of 200MHz.Input voltage breakdown is available at 60V volts.Maximum collector currents can be below 2A volts.

2SC5866TLQ Features


the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 200MHz

2SC5866TLQ Applications


There are a lot of ROHM Semiconductor 2SC5866TLQ applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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