BC857BLP4-7B Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -100mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.As you can see, the part has a transition frequency of 100MHz.An input voltage of 45V volts is the breakdown voltage.Collector current can be as low as 100mA volts at its maximum.
BC857BLP4-7B Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC857BLP4-7B Applications
There are a lot of Diodes Incorporated BC857BLP4-7B applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
