2DB1713-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 500mA 2V.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.When VCE saturation is 250mV @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 180MHz.There is a breakdown input voltage of 12V volts that it can take.During maximum operation, collector current can be as low as 3A volts.
2DB1713-13 Features
the DC current gain for this device is 270 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2DB1713-13 Applications
There are a lot of Diodes Incorporated 2DB1713-13 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
