2DB1713-13 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 500mA 2V.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.When VCE saturation is 250mV @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 180MHz.There is a breakdown input voltage of 12V volts that it can take.During maximum operation, collector current can be as low as 3A volts.

2DB1713-13 Features

the DC current gain for this device is 270 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz

2DB1713-13 Applications

There are a lot of Diodes Incorporated 2DB1713-13 applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver