MMBTA56LT1HTSA1 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 4V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-800mA).Breakdown input voltage is 80V volts.Product comes in the supplier's device package SOT-23-3.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.During maximum operation, collector current can be as low as 500mA volts.

MMBTA56LT1HTSA1 Features

the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -800mA
the supplier device package of SOT-23-3

MMBTA56LT1HTSA1 Applications

There are a lot of Infineon Technologies MMBTA56LT1HTSA1 applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter