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BDP953H6327XTSA1

BDP953H6327XTSA1

BDP953H6327XTSA1

Infineon Technologies

BDP953H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BDP953H6327XTSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 5W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BDP953
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 800mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Max Frequency 100MHz
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 500mV
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
Height 1.6mm
Length 6.5mm
Width 3.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.983171 $0.983171
10 $0.927520 $9.2752
100 $0.875019 $87.5019
500 $0.825489 $412.7445
1000 $0.778764 $778.764
BDP953H6327XTSA1 Product Details

BDP953H6327XTSA1 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.There is a transition frequency of 100MHz in the part.Collector current can be as low as 3A volts at its maximum.

BDP953H6327XTSA1 Features


the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BDP953H6327XTSA1 Applications


There are a lot of Infineon Technologies BDP953H6327XTSA1 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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