BDP953H6327XTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.There is a transition frequency of 100MHz in the part.Collector current can be as low as 3A volts at its maximum.
BDP953H6327XTSA1 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BDP953H6327XTSA1 Applications
There are a lot of Infineon Technologies BDP953H6327XTSA1 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
