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DXT5401-13

DXT5401-13

DXT5401-13

Diodes Incorporated

DXT5401-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXT5401-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage150V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 150V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) -5V
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:56830 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.203042$0.203042
10$0.191549$1.91549
100$0.180707$18.0707
500$0.170478$85.239
1000$0.160828$160.828

DXT5401-13 Product Details

DXT5401-13 Overview


DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.In the part, the transition frequency is 100MHz.The breakdown input voltage is 150V volts.The maximum collector current is 600mA volts.

DXT5401-13 Features


the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

DXT5401-13 Applications


There are a lot of Diodes Incorporated DXT5401-13 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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