DXT5401-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXT5401-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
150V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
150V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
-5V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.203042
$0.203042
10
$0.191549
$1.91549
100
$0.180707
$18.0707
500
$0.170478
$85.239
1000
$0.160828
$160.828
DXT5401-13 Product Details
DXT5401-13 Overview
DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.In the part, the transition frequency is 100MHz.The breakdown input voltage is 150V volts.The maximum collector current is 600mA volts.
DXT5401-13 Features
the DC current gain for this device is 60 @ 10mA 5V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at -5V a transition frequency of 100MHz
DXT5401-13 Applications
There are a lot of Diodes Incorporated DXT5401-13 applications of single BJT transistors.