2SA2039-TL-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 160mV.When VCE saturation is 430mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 6V for high efficiency.As a result, the part has a transition frequency of 360MHz.Single BJT transistor can be broken down at a voltage of 50V volts.The maximum collector current is 5A volts.
2SA2039-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 430mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
2SA2039-TL-E Applications
There are a lot of ON Semiconductor 2SA2039-TL-E applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
