2SA2039-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA2039-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
HTS Code
8541.21.00.75
Max Power Dissipation
800mW
Terminal Form
GULL WING
Base Part Number
2SA2039
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
400MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
430mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Max Frequency
360MHz
Transition Frequency
360MHz
Collector Emitter Saturation Voltage
160mV
Max Breakdown Voltage
50V
Frequency - Transition
360MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Height
2.3mm
Length
6.5mm
Width
5.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
700
$0.43800
$306.6
1,400
$0.35400
$0.354
2,100
$0.32250
$0.645
4,900
$0.30150
$1.206
17,500
$0.29800
$5.066
2SA2039-TL-E Product Details
2SA2039-TL-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 160mV.When VCE saturation is 430mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 6V for high efficiency.As a result, the part has a transition frequency of 360MHz.Single BJT transistor can be broken down at a voltage of 50V volts.The maximum collector current is 5A volts.
2SA2039-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V a collector emitter saturation voltage of 160mV the vce saturation(Max) is 430mV @ 100mA, 2A the emitter base voltage is kept at 6V a transition frequency of 360MHz
2SA2039-TL-E Applications
There are a lot of ON Semiconductor 2SA2039-TL-E applications of single BJT transistors.