KSB1366GTU Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 500mA 5V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 2A.An emitter's base voltage can be kept at -7V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.The part has a transition frequency of 9MHz.The maximum collector current is 3A volts.

KSB1366GTU Features

the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
a transition frequency of 9MHz

KSB1366GTU Applications

There are a lot of ON Semiconductor KSB1366GTU applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface