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KSB1366GTU

KSB1366GTU

KSB1366GTU

ON Semiconductor

KSB1366GTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSB1366GTU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 2W
Current Rating -3A
Frequency 9MHz
Base Part Number KSB1366
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection ISOLATED
Transistor Application AMPLIFIER
Gain Bandwidth Product 9MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 9MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -7V
hFE Min 100
Height 15.87mm
Length 10.16mm
Width 2.54mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.991613 $1.991613
10 $1.878880 $18.7888
100 $1.772528 $177.2528
500 $1.672197 $836.0985
1000 $1.577544 $1577.544
KSB1366GTU Product Details

KSB1366GTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 500mA 5V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 2A.An emitter's base voltage can be kept at -7V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.The part has a transition frequency of 9MHz.The maximum collector current is 3A volts.

KSB1366GTU Features


the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
a transition frequency of 9MHz

KSB1366GTU Applications


There are a lot of ON Semiconductor KSB1366GTU applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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