2DC4617R-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
2DC4617R-7-F Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-523
Number of Pins
3
Weight
2.012816mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
150mA
Frequency
180MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2DC4617
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Gain Bandwidth Product
180MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
400mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
7V
hFE Min
180
Continuous Collector Current
150mA
Height
750μm
Length
1.6mm
Width
800μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.272001
$0.272001
10
$0.256605
$2.56605
100
$0.242080
$24.208
500
$0.228377
$114.1885
1000
$0.215450
$215.45
2DC4617R-7-F Product Details
2DC4617R-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 1mA 6V.A collector emitter saturation voltage of 400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Maintaining the continuous collector voltage at 150mA is essential for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Its current rating is 150mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 180MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2DC4617R-7-F Features
the DC current gain for this device is 180 @ 1mA 6V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 400mV @ 5mA, 50mA the emitter base voltage is kept at 7V the current rating of this device is 150mA a transition frequency of 180MHz
2DC4617R-7-F Applications
There are a lot of Diodes Incorporated 2DC4617R-7-F applications of single BJT transistors.