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MJD2955G

  • MJD2955G
  • MJD2955G

MJD2955G

MJD2955G

ON Semiconductor

MJD2955G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJD2955G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -10A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJD2955
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.75W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 2MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage 1.1V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Height 2.3876mm
Length 6.7056mm
Width 6.223mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.68000 $0.68
75 $0.55827 $41.87025
150 $0.45560 $68.34
525 $0.36015 $189.07875
1,050 $0.28812 $0.28812
MJD2955G Product Details

MJD2955G Overview


This device has a DC current gain of 20 @ 4A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 2MHz.During maximum operation, collector current can be as low as 10A volts.

MJD2955G Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 2MHz

MJD2955G Applications


There are a lot of ON Semiconductor MJD2955G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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