DNBT8105-7 Overview

In this device, the DC current gain is 100 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.An input voltage of 60V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

DNBT8105-7 Features

the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz

DNBT8105-7 Applications

There are a lot of Diodes Incorporated DNBT8105-7 applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface