DNBT8105-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DNBT8105-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
600mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DNBT8105
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Height
1mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.054320
$0.05432
500
$0.039941
$19.9705
1000
$0.033284
$33.284
2000
$0.030536
$61.072
5000
$0.028538
$142.69
10000
$0.026547
$265.47
15000
$0.025674
$385.11
50000
$0.025245
$1262.25
DNBT8105-7 Product Details
DNBT8105-7 Overview
In this device, the DC current gain is 100 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.An input voltage of 60V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
DNBT8105-7 Features
the DC current gain for this device is 100 @ 500mA 5V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 150MHz
DNBT8105-7 Applications
There are a lot of Diodes Incorporated DNBT8105-7 applications of single BJT transistors.