KSC1008YBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 2V.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 50MHz is present in the part.A maximum collector current of 700mA volts is possible.
KSC1008YBU Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008YBU Applications
There are a lot of ON Semiconductor KSC1008YBU applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
