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KSC1008YBU

KSC1008YBU

KSC1008YBU

ON Semiconductor

KSC1008YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC1008YBU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 179mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2006
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 800mW
Terminal Position BOTTOM
Current Rating 700mA
Frequency 50MHz
Base Part Number KSC1008
Number of Elements 1
Element Configuration Single
Power Dissipation 800mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 200mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 8V
hFE Min 40
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.039603 $0.039603
500 $0.029120 $14.56
1000 $0.024267 $24.267
2000 $0.022263 $44.526
5000 $0.020807 $104.035
10000 $0.019355 $193.55
15000 $0.018718 $280.77
50000 $0.018406 $920.3
KSC1008YBU Product Details

KSC1008YBU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 50mA 2V.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 50MHz is present in the part.A maximum collector current of 700mA volts is possible.

KSC1008YBU Features


the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz

KSC1008YBU Applications


There are a lot of ON Semiconductor KSC1008YBU applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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