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PBSS4160XX

PBSS4160XX

PBSS4160XX

Nexperia USA Inc.

PBSS4160XX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS4160XX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Pin Count 3
Power - Max 1.35W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 500mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 180MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.12375 $0.12375
PBSS4160XX Product Details

PBSS4160XX Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 170 @ 500mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 50mA, 500mA.Device displays Collector Emitter Breakdown (60V maximal voltage).

PBSS4160XX Features


the DC current gain for this device is 170 @ 500mA 10V
the vce saturation(Max) is 200mV @ 50mA, 500mA

PBSS4160XX Applications


There are a lot of Nexperia USA Inc. PBSS4160XX applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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