PBSS4160XX Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 170 @ 500mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 50mA, 500mA.Device displays Collector Emitter Breakdown (60V maximal voltage).

PBSS4160XX Features

the DC current gain for this device is 170 @ 500mA 10V
the vce saturation(Max) is 200mV @ 50mA, 500mA

PBSS4160XX Applications

There are a lot of Nexperia USA Inc. PBSS4160XX applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface