PBSS2515M,315 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor contains a transSingle BJT transistorion frequency of 420MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 500mA volts is possible.

PBSS2515M,315 Features

the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 420MHz

PBSS2515M,315 Applications

There are a lot of Nexperia USA Inc. PBSS2515M,315 applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver