2N4403BU Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.As it features a collector emitter saturation voltage of 750mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of -5V can achieve high levels of efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.200MHz is present in the transition frequency.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

2N4403BU Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz

2N4403BU Applications

There are a lot of ON Semiconductor 2N4403BU applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter