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BC807-16-7-F

BC807-16-7-F

BC807-16-7-F

Diodes Incorporated

BC807-16-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC807-16-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Weight 7.994566mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 310mW
Frequency 100MHz
Base Part Number BC807
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 310mW
Power - Max 310mW
Gain Bandwidth Product 100MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Max Frequency 100MHz
Collector Emitter Saturation Voltage -700mV
Max Breakdown Voltage 45V
Frequency - Transition 100MHz
Emitter Base Voltage (VEBO) 5V
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03923 $0.11769
6,000 $0.03450 $0.207
15,000 $0.02978 $0.4467
30,000 $0.02820 $0.846
75,000 $0.02663 $1.99725
150,000 $0.02400 $3.6
BC807-16-7-F Product Details

BC807-16-7-F Overview


DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.As a result, it can handle voltages as low as 45V volts.The product comes in the supplier device package of SOT-23-3.The device exhibits a collector-emitter breakdown at 45V.A maximum collector current of 500mA volts is possible.

BC807-16-7-F Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-23-3

BC807-16-7-F Applications


There are a lot of Diodes Incorporated BC807-16-7-F applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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