BC807-16-7-F Overview

DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V can result in a high level of efficiency.As a result, it can handle voltages as low as 45V volts.The product comes in the supplier device package of SOT-23-3.The device exhibits a collector-emitter breakdown at 45V.A maximum collector current of 500mA volts is possible.

BC807-16-7-F Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-23-3

BC807-16-7-F Applications

There are a lot of Diodes Incorporated BC807-16-7-F applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting