2SD2114KT146V datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SD2114KT146V Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
TIN/TIN COPPER
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
20V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2114
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
350MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
820 @ 10mA 3V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 20mA, 500mA
Collector Emitter Breakdown Voltage
20V
Transition Frequency
350MHz
Collector Emitter Saturation Voltage
180mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
12V
hFE Min
820
Continuous Collector Current
500mA
VCEsat-Max
0.4 V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.048307
$0.048307
500
$0.035520
$17.76
1000
$0.029600
$29.6
2000
$0.027156
$54.312
5000
$0.025379
$126.895
10000
$0.023609
$236.09
15000
$0.022832
$342.48
50000
$0.022451
$1122.55
2SD2114KT146V Product Details
2SD2114KT146V Overview
This device has a DC current gain of 820 @ 10mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.There is a transition frequency of 350MHz in the part.As a result, it can handle voltages as low as 20V volts.The maximum collector current is 500mA volts.
2SD2114KT146V Features
the DC current gain for this device is 820 @ 10mA 3V a collector emitter saturation voltage of 180mV the vce saturation(Max) is 400mV @ 20mA, 500mA the emitter base voltage is kept at 12V the current rating of this device is 500mA a transition frequency of 350MHz
2SD2114KT146V Applications
There are a lot of ROHM Semiconductor 2SD2114KT146V applications of single BJT transistors.