BC847AT-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BC847AT-7-F Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-523
Number of Pins
3
Weight
2.012816mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Type
General Purpose
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC847
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Gain Bandwidth Product
100MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
110
Continuous Collector Current
100mA
Height
750μm
Length
1.6mm
Width
800μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.04184
$0.12552
6,000
$0.03680
$0.2208
15,000
$0.03176
$0.4764
30,000
$0.03008
$0.9024
75,000
$0.02840
$2.13
150,000
$0.02560
$3.84
BC847AT-7-F Product Details
BC847AT-7-F Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Continuous collector voltages should be kept at 100mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 45V volts.Maximum collector currents can be below 100mA volts.
BC847AT-7-F Features
the DC current gain for this device is 110 @ 2mA 5V a collector emitter saturation voltage of 600mV the vce saturation(Max) is 600mV @ 5mA, 100mA the emitter base voltage is kept at 6V the current rating of this device is 100mA a transition frequency of 100MHz
BC847AT-7-F Applications
There are a lot of Diodes Incorporated BC847AT-7-F applications of single BJT transistors.