Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BC847AT-7-F

BC847AT-7-F

BC847AT-7-F

Diodes Incorporated

BC847AT-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC847AT-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Weight 2.012816mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Type General Purpose
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC847
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Gain Bandwidth Product 100MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 600mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 110
Continuous Collector Current 100mA
Height 750μm
Length 1.6mm
Width 800μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.04184 $0.12552
6,000 $0.03680 $0.2208
15,000 $0.03176 $0.4764
30,000 $0.03008 $0.9024
75,000 $0.02840 $2.13
150,000 $0.02560 $3.84
BC847AT-7-F Product Details

BC847AT-7-F Overview


In this device, the DC current gain is 110 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Continuous collector voltages should be kept at 100mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 45V volts.Maximum collector currents can be below 100mA volts.

BC847AT-7-F Features


the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz

BC847AT-7-F Applications


There are a lot of Diodes Incorporated BC847AT-7-F applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News