BC848C-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BC848C-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC848C
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
90mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
420
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
100mA
Height
1.1mm
Length
3.05mm
Width
1.4mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.03741
$0.11223
6,000
$0.03400
$0.204
15,000
$0.02990
$0.4485
30,000
$0.02717
$0.8151
75,000
$0.02444
$1.833
150,000
$0.02080
$3.12
BC848C-7-F Product Details
BC848C-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 420 @ 2mA 5V.A collector emitter saturation voltage of 90mV ensures maximum design flexibility.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 100mA for high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Parts of this part have transition frequencies of 300MHz.Input voltage breakdown is available at 30V volts.A maximum collector current of 200mA volts is possible.
BC848C-7-F Features
the DC current gain for this device is 420 @ 2mA 5V a collector emitter saturation voltage of 90mV the vce saturation(Max) is 600mV @ 5mA, 100mA the emitter base voltage is kept at 5V a transition frequency of 300MHz
BC848C-7-F Applications
There are a lot of Diodes Incorporated BC848C-7-F applications of single BJT transistors.