MMBTA42-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBTA42-7-F Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
300V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMBTA42
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
300V
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
6V
hFE Min
25
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
500mA
Height
1.1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.159240
$0.15924
10
$0.150227
$1.50227
100
$0.141723
$14.1723
500
$0.133701
$66.8505
1000
$0.126133
$126.133
MMBTA42-7-F Product Details
MMBTA42-7-F Overview
DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).For high efficiency, the continuous collector voltage must be kept at 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 50MHz in the part.An input voltage of 300V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at 6V the current rating of this device is 200mA a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated MMBTA42-7-F applications of single BJT transistors.