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PBSS4540X,135

  • PBSS4540X,135
  • PBSS4540X,135

PBSS4540X,135

PBSS4540X,135

Nexperia USA Inc.

PBSS4540X,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS4540X,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 550mW
Terminal Form FLAT
Frequency 70MHz
Base Part Number PBSS4540
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Case Connection COLLECTOR
Power - Max 1.6W
Transistor Application SWITCHING
Test Current 5mA
Gain Bandwidth Product 70MHz
Polarity/Channel Type NPN
Zener Voltage 3.3V
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 355mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 70MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 6V
hFE Min 300
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.451560 $0.45156
10 $0.426000 $4.26
100 $0.401887 $40.1887
500 $0.379138 $189.569
1000 $0.357678 $357.678
PBSS4540X,135 Product Details

PBSS4540X,135 Overview


In this device, the DC current gain is 250 @ 2A 2V, which is the ratio between the base current and the collector current.When VCE saturation is 355mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.The part has a transition frequency of 70MHz.Breakdown input voltage is 40V volts.The maximum collector current is 4A volts.

PBSS4540X,135 Features


the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 355mV @ 500mA, 5A
the emitter base voltage is kept at 6V
a transition frequency of 70MHz

PBSS4540X,135 Applications


There are a lot of Nexperia USA Inc. PBSS4540X,135 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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