2N5679 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N5679 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N5679
Power - Max
1W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 250mA 2V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
1A
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$22.38000
$22.38
500
$22.1562
$11078.1
1000
$21.9324
$21932.4
1500
$21.7086
$32562.9
2000
$21.4848
$42969.6
2500
$21.261
$53152.5
2N5679 Product Details
2N5679 Description
The 2N5679 from ON Semiconductor is a -100V Silicon PNP Epitaxial Planar Transistor intended for use as a driver for high transistors in general purpose amplifiers and switching circuits.
2N5679 Features
12 month limited warranty *view Terms & Conditions for details
Collector-base voltage(Vcbo = 100V)
Emitter-base voltage(Vebo = 4V)
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