NZT751 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NZT751 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
45 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
1.2W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-4A
Frequency
75MHz
Base Part Number
NZT751
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
75MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
75MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
-5V
hFE Min
75
Height
1.7mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.27451
$1.09804
8,000
$0.25558
$2.04464
12,000
$0.25242
$3.02904
NZT751 Product Details
NZT751 Overview
In this device, the DC current gain is 40 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at -5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.Parts of this part have transition frequencies of 75MHz.As a result, it can handle voltages as low as 60V volts.A maximum collector current of 4A volts is possible.
NZT751 Features
the DC current gain for this device is 40 @ 2A 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at -5V the current rating of this device is -4A a transition frequency of 75MHz
NZT751 Applications
There are a lot of ON Semiconductor NZT751 applications of single BJT transistors.