NJVMJD117T4G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 2A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.An emitter's base voltage can be kept at 5V to gain high efficiency.25MHz is present in the transition frequency.A maximum collector current of 2A volts can be achieved.
NJVMJD117T4G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 25MHz
NJVMJD117T4G Applications
There are a lot of ON Semiconductor NJVMJD117T4G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
