ZXTN4004KTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZXTN4004KTC Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
1.799996g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
3.8W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN4004
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
3.8W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 250mV
Current - Collector Cutoff (Max)
50nA
Collector Emitter Breakdown Voltage
150V
Max Breakdown Voltage
150V
Collector Base Voltage (VCBO)
150V
Emitter Base Voltage (VEBO)
7V
hFE Min
100
Continuous Collector Current
1A
Height
6.2mm
Length
6.7mm
Width
2.39mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.18056
$0.36112
5,000
$0.17018
$0.8509
12,500
$0.15981
$1.91772
25,000
$0.15808
$3.952
ZXTN4004KTC Product Details
ZXTN4004KTC Overview
In this device, the DC current gain is 100 @ 150mA 250mV, which is the ratio between the base current and the collector current.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.Keeping the emitter base voltage at 7V can result in a high level of efficiency.As a result, it can handle voltages as low as 150V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZXTN4004KTC Features
the DC current gain for this device is 100 @ 150mA 250mV the emitter base voltage is kept at 7V
ZXTN4004KTC Applications
There are a lot of Diodes Incorporated ZXTN4004KTC applications of single BJT transistors.