MMBT2369ALT1G Overview

DC current gain in this device equals 20 @ 100mA 1V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 10mA, 100mA.Keeping the emitter base voltage at 4.5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 200mA current rating.The part has a transition frequency of 500MHz.As a result, it can handle voltages as low as 15V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

MMBT2369ALT1G Features

the DC current gain for this device is 20 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 200mA
a transition frequency of 500MHz

MMBT2369ALT1G Applications

There are a lot of ON Semiconductor MMBT2369ALT1G applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting