BCX5510TA Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Parts of this part have transition frequencies of 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts is possible.
BCX5510TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5510TA Applications
There are a lot of Diodes Incorporated BCX5510TA applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
