ZXTP2008GTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -210mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at -5.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 110MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.Single BJT transistor is possible to have a collector current as low as 5.5A volts at Single BJT transistors maximum.
ZXTP2008GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz
ZXTP2008GTA Applications
There are a lot of Diodes Incorporated ZXTP2008GTA applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
