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KSH117TF

KSH117TF

KSH117TF

ON Semiconductor

KSH117TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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KSH117TF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Current Rating -2A
Base Part Number KSH117
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 1.75W
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A 3V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 25MHz
Collector Emitter Saturation Voltage 2V
Max Breakdown Voltage 100V
Frequency - Transition 25MHz
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -5V
hFE Min 1000
Height 2.3mm
Length 6.6mm
Width 6.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.31000 $0.31
500 $0.3069 $153.45
1000 $0.3038 $303.8
1500 $0.3007 $451.05
2000 $0.2976 $595.2
2500 $0.2945 $736.25
KSH117TF Product Details

KSH117TF Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 2A 3V.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 25MHz.Input voltage breakdown is available at 100V volts.When collector current reaches its maximum, it can reach 2A volts.

KSH117TF Features


the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 25MHz

KSH117TF Applications


There are a lot of ON Semiconductor KSH117TF applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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