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KSP42BU

KSP42BU

KSP42BU

ON Semiconductor

KSP42BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSP42BU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 16 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 179mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 300V
Max Power Dissipation625mW
Terminal Position BOTTOM
Current Rating500mA
Frequency 50MHz
Base Part Number KSP42
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage300V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 6V
hFE Min 40
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:16945 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.37000$0.37
10$0.30100$3.01
100$0.15980$15.98
500$0.10514$52.57

KSP42BU Product Details

KSP42BU Overview


This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.In the part, the transition frequency is 50MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

KSP42BU Features


the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz

KSP42BU Applications


There are a lot of ON Semiconductor KSP42BU applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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