2SAR554P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SAR554P5T100 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
500mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
500mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 100mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage
80V
Max Breakdown Voltage
80V
Frequency - Transition
340MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.299160
$0.29916
10
$0.282226
$2.82226
100
$0.266251
$26.6251
500
$0.251181
$125.5905
1000
$0.236963
$236.963
2SAR554P5T100 Product Details
2SAR554P5T100 Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 25mA, 500mA.There is a breakdown input voltage of 80V volts that it can take.In extreme cases, the collector current can be as low as 1.5A volts.
2SAR554P5T100 Features
the DC current gain for this device is 120 @ 100mA 3V the vce saturation(Max) is 400mV @ 25mA, 500mA
2SAR554P5T100 Applications
There are a lot of ROHM Semiconductor 2SAR554P5T100 applications of single BJT transistors.