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2SAR554P5T100

2SAR554P5T100

2SAR554P5T100

ROHM Semiconductor

2SAR554P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SAR554P5T100 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 500mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 80V
Max Breakdown Voltage 80V
Frequency - Transition 340MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.299160 $0.29916
10 $0.282226 $2.82226
100 $0.266251 $26.6251
500 $0.251181 $125.5905
1000 $0.236963 $236.963
2SAR554P5T100 Product Details

2SAR554P5T100 Overview


In this device, the DC current gain is 120 @ 100mA 3V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 25mA, 500mA.There is a breakdown input voltage of 80V volts that it can take.In extreme cases, the collector current can be as low as 1.5A volts.

2SAR554P5T100 Features


the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 25mA, 500mA

2SAR554P5T100 Applications


There are a lot of ROHM Semiconductor 2SAR554P5T100 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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