KSB1116YTA Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 135 @ 100mA 2V.When VCE saturation is 300mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 120MHz.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

KSB1116YTA Features

the DC current gain for this device is 135 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 120MHz

KSB1116YTA Applications

There are a lot of Rochester Electronics, LLC KSB1116YTA applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver