2SB1560 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Sanken stock available on our website
SOT-23
2SB1560 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
1999
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
BUILT IN BIAS RESISTOR
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
PNP
Configuration
SINGLE
Power Dissipation
100W
Transistor Application
AMPLIFIER
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
5000 @ 7A 4V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
2.5V @ 7mA, 7A
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
10A
Transition Frequency
50MHz
Frequency - Transition
50MHz
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.493625
$0.493625
10
$0.465684
$4.65684
100
$0.439324
$43.9324
500
$0.414457
$207.2285
1000
$0.390997
$390.997
2SB1560 Product Details
2SB1560 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 5000 @ 7A 4V.When VCE saturation is 2.5V @ 7mA, 7A, transistor means Ic has reached transistors maximum value (saturated).The part has a transition frequency of 50MHz.Detection of Collector Emitter Breakdown at 150V maximal voltage is present.
2SB1560 Features
the DC current gain for this device is 5000 @ 7A 4V the vce saturation(Max) is 2.5V @ 7mA, 7A a transition frequency of 50MHz
2SB1560 Applications
There are a lot of Sanken 2SB1560 applications of single BJT transistors.