DMN2170U-7

new-10%

Manufacturer part number:DMN2170U-7

Manufacturer:Diodes Incorporated

Description:MOSFET 600mW 20Vdss

Case Package:SOT-23

Datasheet:DMN2170U-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	600mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	217pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.3A Ta
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±12V
Continuous Drain Current (ID)	2.3A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.07Ohm
Drain to Source Breakdown Voltage	20V
Height	1mm
Length	2.9mm
Width	1.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant