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PSMN2R2-40PS,127

PSMN2R2-40PS,127

PSMN2R2-40PS,127

Nexperia USA Inc.

PSMN2R2-40PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PSMN2R2-40PS,127 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code not_compliant
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 306W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.1m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8423pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 100A
Drain-source On Resistance-Max 0.0021Ohm
Pulsed Drain Current-Max (IDM) 962A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 1240 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.730153 $2.730153
10 $2.575616 $25.75616
100 $2.429826 $242.9826
500 $2.292289 $1146.1445
1000 $2.162537 $2162.537
PSMN2R2-40PS,127 Product Details

PSMN2R2-40PS,127 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1240 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 8423pF @ 20V.Its drain current is 100A, and it is the maximum continuous current the device can conduct.IDM is the?maximum rated peak drain current?for a power MOSFET, and its maximal pulsed drain current is 962A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.By using drive voltage (10V), this device helps reduce its overall power consumption.

PSMN2R2-40PS,127 Features


the avalanche energy rating (Eas) is 1240 mJ
based on its rated peak drain current 962A.
a 40V drain to source voltage (Vdss)

PSMN2R2-40PS,127 Applications


There are a lot of Nexperia USA Inc. PSMN2R2-40PS,127 applications of single MOSFETs transistors.

  • Motor control
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Telecom 1 Sever Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • LCD/LED/ PDP TV Lighting
  • Micro Solar Inverter
  • DC-to-DC converters
  • Motor Drives and Uninterruptible Power Supples
  • Power Management Functions
  • Uninterruptible Power Supply

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