BSC018N04LSGATMA1 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 295 mJ.A device's maximal input capacitance is 12000pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 400A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 40V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

BSC018N04LSGATMA1 Features

the avalanche energy rating (Eas) is 295 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 400A.

BSC018N04LSGATMA1 Applications

There are a lot of Infineon Technologies
BSC018N04LSGATMA1 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples