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FQP7N65C

FQP7N65C

FQP7N65C

ON Semiconductor

MOSFET N-CH 650V 7A TO-220

SOT-23

FQP7N65C Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 160W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1245pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.75000 $0.75
500 $0.7425 $371.25
1000 $0.735 $735
1500 $0.7275 $1091.25
2000 $0.72 $1440
2500 $0.7125 $1781.25

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