DMN5L06VAK-7

new-10%

Manufacturer part number:DMN5L06VAK-7

Manufacturer:Diodes Incorporated

Description:DMN5L06VAK: 50 V 2 Ohm Dual N-Channel Enhancement Mode Mosfet - SOT-563

Case Package:SOT-23

Datasheet:DMN5L06VAK-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	3.005049mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Max Power Dissipation	250mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMN5L06VAK
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Drain to Source Voltage (Vdss)	50V
Continuous Drain Current (ID)	280mA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	3Ohm
Drain to Source Breakdown Voltage	50V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Feedback Cap-Max (Crss)	5 pF
Height	600μm
Length	1.6mm
Width	1.2mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free