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JANTXV2N3439

JANTXV2N3439

JANTXV2N3439

Microsemi Corporation

JANTXV2N3439 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N3439 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/368
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 800mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 800mW
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA 10V
Current - Collector Cutoff (Max) 2μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
Collector Emitter Breakdown Voltage 350V
Transition Frequency 15MHz
Collector Base Voltage (VCBO) 450V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $18.973000 $18.973
10 $17.899057 $178.99057
100 $16.885902 $1688.5902
500 $15.930097 $7965.0485
1000 $15.028393 $15028.393
JANTXV2N3439 Product Details

JANTXV2N3439 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 20mA 10V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.In this part, there is a transition frequency of 15MHz.A maximum collector current of 1A volts can be achieved.

JANTXV2N3439 Features


the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz

JANTXV2N3439 Applications


There are a lot of Microsemi Corporation JANTXV2N3439 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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