NJW21193G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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NJW21193G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
200W
Frequency
4MHz
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Power - Max
200W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
4MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
16A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 8A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage
350V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
4V
Max Breakdown Voltage
250V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
Height
20.1mm
Length
15.8mm
Width
5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.16000
$4.16
30
$3.53200
$105.96
120
$3.06100
$367.32
510
$2.60578
$1328.9478
1,020
$2.19765
$2.19765
NJW21193G Product Details
NJW21193G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 8A 5V DC current gain.A collector emitter saturation voltage of 4V ensures maximum design flexibility.A VCE saturation (Max) of 4V @ 3.2A, 16A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 4MHz.A breakdown input voltage of 250V volts can be used.A maximum collector current of 16A volts is possible.
NJW21193G Features
the DC current gain for this device is 20 @ 8A 5V a collector emitter saturation voltage of 4V the vce saturation(Max) is 4V @ 3.2A, 16A the emitter base voltage is kept at 5V a transition frequency of 4MHz
NJW21193G Applications
There are a lot of ON Semiconductor NJW21193G applications of single BJT transistors.