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NJW21193G

NJW21193G

NJW21193G

ON Semiconductor

NJW21193G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJW21193G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation200W
Frequency 4MHz
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200mW
Power - Max 200W
Transistor Application AMPLIFIER
Gain Bandwidth Product4MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage350V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage4V
Max Breakdown Voltage 250V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1744 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.16000$4.16
30$3.53200$105.96
120$3.06100$367.32
510$2.60578$1328.9478

NJW21193G Product Details

NJW21193G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 8A 5V DC current gain.A collector emitter saturation voltage of 4V ensures maximum design flexibility.A VCE saturation (Max) of 4V @ 3.2A, 16A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 4MHz.A breakdown input voltage of 250V volts can be used.A maximum collector current of 16A volts is possible.

NJW21193G Features


the DC current gain for this device is 20 @ 8A 5V
a collector emitter saturation voltage of 4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz

NJW21193G Applications


There are a lot of ON Semiconductor NJW21193G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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