DPLS350Y-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DPLS350Y-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
DPLS350
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
390mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-390mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
-6V
Height
1.5mm
Length
4.5mm
Width
2.48mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.710643
$0.710643
10
$0.670419
$6.70419
100
$0.632471
$63.2471
500
$0.596670
$298.335
1000
$0.562896
$562.896
DPLS350Y-13 Product Details
DPLS350Y-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -390mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.This device can take an input voltage of 50V volts before it breaks down.Collector current can be as low as 3A volts at its maximum.
DPLS350Y-13 Features
the DC current gain for this device is 200 @ 1A 2V a collector emitter saturation voltage of -390mV the vce saturation(Max) is 390mV @ 300mA, 3A the emitter base voltage is kept at -6V a transition frequency of 100MHz
DPLS350Y-13 Applications
There are a lot of Diodes Incorporated DPLS350Y-13 applications of single BJT transistors.