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DPLS350Y-13

DPLS350Y-13

DPLS350Y-13

Diodes Incorporated

DPLS350Y-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DPLS350Y-13 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number DPLS350
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 390mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -390mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) -6V
Height 1.5mm
Length 4.5mm
Width 2.48mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.710643 $0.710643
10 $0.670419 $6.70419
100 $0.632471 $63.2471
500 $0.596670 $298.335
1000 $0.562896 $562.896
DPLS350Y-13 Product Details

DPLS350Y-13 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -390mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.This device can take an input voltage of 50V volts before it breaks down.Collector current can be as low as 3A volts at its maximum.

DPLS350Y-13 Features


the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of -390mV
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 100MHz

DPLS350Y-13 Applications


There are a lot of Diodes Incorporated DPLS350Y-13 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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