FJV1845FMTF Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 1mA 6V.A collector emitter saturation voltage of 70mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 110MHz.There is a breakdown input voltage of 120V volts that it can take.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.

FJV1845FMTF Features

the DC current gain for this device is 300 @ 1mA 6V
a collector emitter saturation voltage of 70mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 110MHz

FJV1845FMTF Applications

There are a lot of ON Semiconductor FJV1845FMTF applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting