DSS4140V-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DSS4140V-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
3.005049mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
600mW
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
600mW
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
440mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
150MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
300
Height
600μm
Length
1.6mm
Width
1.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.055236
$0.055236
500
$0.040615
$20.3075
1000
$0.033846
$33.846
2000
$0.031051
$62.102
5000
$0.029020
$145.1
10000
$0.026995
$269.95
15000
$0.026108
$391.62
50000
$0.025671
$1283.55
DSS4140V-7 Product Details
DSS4140V-7 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 500mA 5V DC current gain.When VCE saturation is 440mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Parts of this part have transition frequencies of 150MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
DSS4140V-7 Features
the DC current gain for this device is 300 @ 500mA 5V the vce saturation(Max) is 440mV @ 200mA, 2A the emitter base voltage is kept at 5V a transition frequency of 150MHz
DSS4140V-7 Applications
There are a lot of Diodes Incorporated DSS4140V-7 applications of single BJT transistors.