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DSS4140V-7

DSS4140V-7

DSS4140V-7

Diodes Incorporated

DSS4140V-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DSS4140V-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 3.005049mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 600mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 600mW
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 440mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 150MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 300
Height 600μm
Length 1.6mm
Width 1.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.055236 $0.055236
500 $0.040615 $20.3075
1000 $0.033846 $33.846
2000 $0.031051 $62.102
5000 $0.029020 $145.1
10000 $0.026995 $269.95
15000 $0.026108 $391.62
50000 $0.025671 $1283.55
DSS4140V-7 Product Details

DSS4140V-7 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 500mA 5V DC current gain.When VCE saturation is 440mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Parts of this part have transition frequencies of 150MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

DSS4140V-7 Features


the DC current gain for this device is 300 @ 500mA 5V
the vce saturation(Max) is 440mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

DSS4140V-7 Applications


There are a lot of Diodes Incorporated DSS4140V-7 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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