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DSS4160TQ-7

DSS4160TQ-7

DSS4160TQ-7

Diodes Incorporated

DSS4160TQ-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DSS4160TQ-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Max Power Dissipation725mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 725mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 280mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 280mV @ 100mA, 1A
Collector Emitter Breakdown Voltage60V
Transition Frequency 150MHz
Max Breakdown Voltage 60V
Frequency - Transition 150MHz
RoHS StatusROHS3 Compliant
In-Stock:17424 items

Pricing & Ordering

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DSS4160TQ-7 Product Details

DSS4160TQ-7 Overview


DC current gain in this device equals 200 @ 500mA 5V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 280mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Parts of this part have transition frequencies of 150MHz.This device can take an input voltage of 60V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

DSS4160TQ-7 Features


the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 280mV @ 100mA, 1A
a transition frequency of 150MHz

DSS4160TQ-7 Applications


There are a lot of Diodes Incorporated DSS4160TQ-7 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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