DVRN6056-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DVRN6056-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
6
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power - Max
300mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN + Zener Diode (Isolated)
Collector Emitter Voltage (VCEO)
750mV
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 1V
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
250MHz
Frequency - Transition
250MHz
Turn Off Time-Max (toff)
255ns
Turn On Time-Max (ton)
35ns
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.050301
$0.050301
500
$0.036986
$18.493
1000
$0.030821
$30.821
2000
$0.028277
$56.554
5000
$0.026427
$132.135
10000
$0.024583
$245.83
15000
$0.023775
$356.625
50000
$0.023378
$1168.9
DVRN6056-7-F Product Details
DVRN6056-7-F Overview
This device has a DC current gain of 100 @ 150mA 1V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.In this part, there is a transition frequency of 250MHz.The maximum collector current is 600mA volts.
DVRN6056-7-F Features
the DC current gain for this device is 100 @ 150mA 1V the vce saturation(Max) is 750mV @ 50mA, 500mA a transition frequency of 250MHz
DVRN6056-7-F Applications
There are a lot of Diodes Incorporated DVRN6056-7-F applications of single BJT transistors.