2SA1576AT106R Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 1mA 6V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.For high efficiency, the continuous collector voltage must be kept at -150mA.The emitter base voltage can be kept at -6V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -150mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 50V volts.The maximum collector current is 150mA volts.
2SA1576AT106R Features
the DC current gain for this device is 180 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
the current rating of this device is -150mA
a transition frequency of 140MHz
2SA1576AT106R Applications
There are a lot of ROHM Semiconductor 2SA1576AT106R applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
