NST856BF3T5G Overview

In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The part has a transition frequency of 100MHz.Collector current can be as low as 100mA volts at its maximum.

NST856BF3T5G Features

the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 800mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

NST856BF3T5G Applications

There are a lot of ON Semiconductor NST856BF3T5G applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver